Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes
PBN-AR
Instytucja
Wydział Elektroniki, Telekomunikacji i Informatyki (Politechnika Gdańska)
Źródłowe zdarzenia ewaluacyjne
Informacje podstawowe
Główny język publikacji
ENG
Czasopismo
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
ISSN
0947-8396
EISSN
Wydawca
DOI
URL
Rok publikacji
2016
Numer zeszytu
270
Strony od-do
1-9
Numer tomu
122
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
AFM
BORON-DOPED DIAMOND
MEMS
NEMS
STM
Streszczenia
Język
Treść
Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. Nanocrystalline boron doped -diamond (B-NCD) films were deposited using Microwave Plasma Assisted Chemical Vapour Deposition (MW PA CVD) method. The variation of B-NCD morphology, structure and optical parameters were particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline B-NCD with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm-1. Moreover, the change of mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change of spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM – Kelvin probe force microscopy (KPFM). The crystallites-grain size was recorded at 153 nm and 238 nm for boron-doped film and undoped respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers were estimated. For the undoped diamond films average CPD of 650 mV and for boron doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 eV and 5.15 eV for doped and undoped diamond film respectively. Boron-doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.
Inne
System-identifier
134134
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