Electrochemical and photocurrent characterization of polymer solar cells with improved performance after GO addition to the PEDOT:PSS hole transporting layer
PBN-AR
Instytucja
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Źródłowe zdarzenia ewaluacyjne
Informacje podstawowe
Główny język publikacji
en
Czasopismo
SOLAR ENERGY (35pkt w roku publikacji)
ISSN
0038-092X
EISSN
Wydawca
PERGAMON-ELSEVIER SCIENCE LTD
DOI
URL
Rok publikacji
2017
Numer zeszytu
Strony od-do
230-242
Numer tomu
146
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
en
Graphene oxide
Polymer solar cells
Electrochemical properties
Streszczenia
Język
en
Treść
In this paper, chemically synthesized graphene oxide (GO) was added to modify the performance and electrochemical properties of bulk heterojunction polymer solar cells (PSCs) with different architectures. GO was obtained by modified Hummers method and fully characterized by Raman spectroscopy, Fourier Transform Infrared Spectroscopy, X-ray diffraction as well as with cyclic voltammetry (CV). Bulk heterojunction PSCs with P3HT:PC61BM or PTB7:PC71BM active layers and PEDOT:PSS as hole transport layers (HTL) were constructed and investigated relative to: (i) concentration of GO in HTL, (ii) acidity of GO, (iii) type of polymer used in active layer, (iv) annealing temperature of the active layer and (v) place where GO is incorporated in the devices. For PSCs, the best performance was obtained for device with the ITO/PEDOT:PSS:GO/PTB7:PC71BM/Al architecture when the volume ratio of PEDOT:PSS to GO was 1:1. Under these conditions, a power conversion efficiency (PCE) of 5.22% with open circuit voltage Voc = 0.654 V, short circuit current density Jsc = 15.17 mA/cm2, and fill factor FF = 0.53 were achieved. It is shown that for devices with P3HT:PC61BM active layer, a better performance of device was achieved for the active layer annealed at 130 _C instead of 75 _C. For the ITO/(PEDOT:PSS):GO (1:1)/P3HT: PC61BM (75 _C)/Al device about 75% higher PCE was found compared with reference device (PCE for device without GO = 0.64%, while PCE for device with GO = 1.07%). The influence of GO on energy gap and HOMO-LUMO levels in PEDOT:PSS was investigated by CV method. The observed effect of GO in the HTL is to reduce the HOMO-LUMO gap and to shift the LUMO position downwards in energy, with the GO contents. The devices were additionally tested by electrochemical impedance spectroscopy (EIS) and well-fitted equivalent circuits were proposed.
Cechy publikacji
discipline:Elektrotechnika
discipline:Inżynieria materiałowa
discipline:Electrical engineering
discipline:Materials science
Original article
Original article presents the results of original research or experiment.
Oryginalny artykuł naukowy
Oryginalny artykuł naukowy przedstawia rezultaty oryginalnych badań naukowych lub eksperymentu.
Inne
System-identifier
PBN-R:807238
CrossrefMetadata from Crossref logo
Cytowania
Liczba prac cytujących tę pracę
Brak danych
Referencje
Liczba prac cytowanych przez tę pracę
Brak danych