Characterization of the CVD Graphene Monolayer as an Active Element of a One-Port Microwave Device
PBN-AR
Instytucja
Wydział Elektroniki i Technik Informacyjnych (Politechnika Warszawska)
Źródłowe zdarzenia ewaluacyjne
Informacje podstawowe
Główny język publikacji
en
Czasopismo
IEEE Transactions on Electron Devices (35pkt w roku publikacji)
ISSN
0018-9383
EISSN
Wydawca
DOI
URL
Rok publikacji
2017
Numer zeszytu
10
Strony od-do
4340-4345
Numer tomu
64
Identyfikator DOI
Liczba arkuszy
0.5
Słowa kluczowe
en
Graphene
microwaves
one-port device.
Streszczenia
Język
en
Treść
The one-port configuration of a microwave device is the simplest architecture for graphene ultrafast (photo-)resistors, (photo-)diodes, sensors, and photodetectors. Here, this configuration is realized by a segment of coplanar waveguide (CPW) loaded with a CVD graphene monolayer shorted to the ground. The magnitude and phase of the reflection coefficient (S₁₁ parameter) measured in the 0.1 ÷ 26 GHz frequency range are presented for undisturbed structures as well as for structures illuminated by white light and electrostatically polarized with the backgate. A simple and robust de-embedding procedure based on the signal flow graph and allowing for a simultaneous extraction of the parameters characterizing the CPW segment and the graphene monolayer is proposed. The graphene impedance at microwave frequencies is in good agreement with the value of dc sheet resistance obtained from van der Pauw measurements. The back-gate voltage modulation is an efficient way to modulate both the dc sheet resistance and the impedance. In particular, the Dirac point can be achieved both at microwave frequencies and at dc. An equivalent circuit model consists of only the resistance and capacitance connected in parallel, because of good quality ohmic contacts and a negligible inductance as a result of low-current flow in high-resistance graphene samples.
Inne
System-identifier
WUTabfab652c4e64843963264f19aba1c2a
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