Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
PBN-AR
Instytucja
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
EN
Czasopismo
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN
1071-1023
EISSN
Wydawca
A V S AMER INST PHYSICS
DOI
URL
Rok publikacji
2013
Numer zeszytu
3
Strony od-do
03C130
Numer tomu
31
Identyfikator DOI
Liczba arkuszy
1
Słowa kluczowe
EN
Multiple quantum wells
Luminescence
Photoluminescence
X-ray diffraction
Molecular beam epitaxy
Streszczenia
Język
EN
Treść
The growth of N-polar (In,Ga)N structures by plasma-assisted molecular beam epitaxy is studied. (In,Ga)N multiple quantum well samples with atomically smooth surface were grown and their good structural quality was confirmed by x-ray diffraction, scanning transmission electron microscopy, and defect selective etching. The In incorporation was higher in the N-polar than in the Ga-polar oriented crystal, consistent with previous reports. However, despite the good morphological and structural properties of these samples, no photoluminescence signal from the (In,Ga)N wells was detected. In contrast, a thick N-polar (In,Ga)N layer exhibited a broad peak at 620 nm in good agreement with the In content determined by x-ray diffraction. The potential source of the luminescence quenching in the N-polar (In,Ga)N multiple quantum wells is discussed and attributed either to a strong nonradiative recombination channel at the surface promoted by the electric field or to the high concentration of point defects at the interfaces of the quantum well structures.
Inne
System-identifier
PX-5698c97c810641ecf91a88c3
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