Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
PBN-AR
Instytucja
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
en
Czasopismo
Journal of Crystal Growth
ISSN
0022-0248
EISSN
1873-5002
Wydawca
ELSEVIER SCIENCE BV
Rok publikacji
2014
Numer zeszytu
Strony od-do
330-336
Numer tomu
402
Identyfikator DOI
Liczba arkuszy
0,8
Słowa kluczowe
en
Atomic force microscopy
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting ternary compounds
CHEMICAL-VAPOR-DEPOSITION
QUANTUM-WELLS
QUANTITATIVE MEASUREMENT
GAN(0001) SURFACE
PHASE EPITAXY
GAN
NITRIDE
HETEROSTRUCTURES
MORPHOLOGY
GALLIUM
Streszczenia
Język
en
Treść
The InGaN layers were grown using the Metalorganic Vapour Phase Epitaxy on bulk GaN substrates in a stop-and-go-mode (30s growth, 30s stop) and then examined using X-ray Diffraction (XRD), Photoluminescence (PL), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM). The experiment was done in order to study an influence of hydrogen and TMIn flows during the growth-breaks On the InGaN layer. It was found that the presence of hydrogen during the breaks removes indium atoms from the already grown InGaN layer and delays In-incorporation into the subsequent one. As a result, instead of having about 18% of In in the continuously grown InGaN, we have only about 6% (average In-content) and the layer is thinner by more than 20%. In the case of having simultaneously H-2 and TMIn flows on during the breaks, we get three times less of In-atoms torn away and the layer has the thickness unchanged. The simultaneous presence of TMln and H-2 also gave much smaller surface roughness as compared to the situation when only H-2 was on during the breaks.
Cechy publikacji
ORIGINAL_ARTICLE
Inne
System-identifier
676400
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