Complementary Characterization of Ti-Si-C Films by X-Ray Diffraction and Absorption
PBN-AR
Instytucja
Instytut Fizyki Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
en
Czasopismo
RADIATION PHYSICS AND CHEMISTRY
ISSN
0969-806X
EISSN
Wydawca
PERGAMON-ELSEVIER SCIENCE LTD
DOI
URL
Rok publikacji
2013
Numer zeszytu
Strony od-do
168-173
Numer tomu
93
Link do pełnego tekstu
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Słowa kluczowe
en
X-ray diffraction X-ray absorption MAX phases Thin layers Co-sputtering; Ordering
Streszczenia
Język
en
Treść
Advanced electronic devices based on III-N semiconductors, particularly these operated at the high power and high frequency or corrosive atmosphere, need elaboration of new technology for contacts metallization which are thermally and chemically stable. Performed studies aimed at the development of materials for applications in the improved metallization. Due to the unique combination of the metallic electro-thermal conductivity and ceramic resistance to oxidation and thermal stability, the MAX phases were chosen as the materials potentially applicable to this task. Particular interest lies in the MAX phases based on the Ti, Si and C or N atoms, especially on the Ti3SiC2 phase. The paper focuses on a comprehensive characterization of films grown by means of high-temperature magnetron Ti, Si and C co-sputtering. The complementary characterization by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) is presented. XRD studies pointed out the presence of several phases in the investigated samples, therefore XAS as an atomic sensitive probe was applied to examine the average atomic order around Ti atoms as a function of the technological parameters and to point towards proper procedures to achieve the appropriate stoichiometry around Ti atoms and finally the Ti3SiC2 phase. (C) 2013 Elsevier Ltd. All rights
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Oryginalny artykuł naukowy przedstawia rezultaty oryginalnych badań naukowych lub eksperymentu.
Original article
Original article presents the results of original research or experiment.
Inne
System-identifier
PBN-R:569147
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