Czochralski Growth and Optical Properties of (LuxGd1-x)2SiO5 Solid Solution Crystals Single Doped with Sm3+ and Dy3+
PBN-AR
Instytucja
Instytut Fizyki Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
en
Czasopismo
ACTA PHYSICA POLONICA A
ISSN
0587-4246
EISSN
1898-794X
Wydawca
Institute of Physics Polish Academy of Sciences
DOI
Rok publikacji
2013
Numer zeszytu
2
Strony od-do
321-328
Numer tomu
124
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
en
LSO YSO SCINTILLATOR LUMINESCENCE LYSO
Streszczenia
Język
en
Treść
Solid solution crystals (LuxGd1-x)(2)SiO5 single doped with Sm3+ and Dy3+ were grown by the Czochralski method. Segregation coefficients Lu/Gd, melting temperatures and structures of solid solution crystals were determined for 0.15 <= x <= 0.8. It was found that for x >= 0.17 the crystals belong to the monoclinic system within a space group C2/c and their melting temperature diminishes monotonously from 1990 degrees C to 1780 degrees C when x decreases from 0.8 to 0.15. Disparity of ionic radii of Lu3+ and Gd3+ induces structural disorder that brings about an inhomogeneous broadening of spectral lines in absorption and emission spectra of incorporated luminescent Sm3+ and Dy3+ ions. Optical properties of obtained crystals were determined based on results of measurement of absorption and emission spectra and luminescence decay curves. Spectroscopic investigation revealed that Sm3+ doped crystals show intense emission distributed in the visible-near infrared region with the most intense band centred at 605 nm and characterized by a branching ratio of 0.43. Emission spectrum of Dy3+ doped crystals is dominated by a band centred at 575 nm and characterized by a branching ratio of 0.58. It has been concluded that the systems under study are potential laser materials able to generate visible emission upon GaN/InGaN laser diode pumping.
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Original article
Original article presents the results of original research or experiment.
Inne
System-identifier
PBN-R:670136
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