Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous AlxOy
PBN-AR
Instytucja
Instytut Fizyki Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
en
Czasopismo
Journal of Applied Physics
ISSN
0021-8979
EISSN
1089-7550
Wydawca
AMER INST PHYSICS
DOI
URL
Rok publikacji
2015
Numer zeszytu
18
Strony od-do
184303
Numer tomu
118
Identyfikator DOI
Liczba arkuszy
Streszczenia
Język
en
Treść
Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous AlxOy buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-AlxOy are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 ?C, which allowed determination of nucleation energy of the NWs on a-AlxOy equal to 6 eV. This value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-AlxOy are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-AlxOy are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-AlxOy is lower than in those grown under similar conditions on bare Si. This shows that the a-AlxOy buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.
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Original article presents the results of original research or experiment.
Inne
System-identifier
PBN-R:693606
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