Effect of MgO single crystal orientation on microstructure of reaction products formed in liquid Al/MgO couples
PBN-AR
Instytucja
Instytut Metalurgii i Inżynierii Materiałowej im. Aleksandra Krupkowskiego Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
EN
Czasopismo
Inżynieria Materiałowa
ISSN
0208-6247
EISSN
Wydawca
Wydawnictwo Czasopism i Książek Technicznych SIGMA-NOT Sp. z o.o.
DOI
Rok publikacji
2013
Numer zeszytu
3
Strony od-do
188-191
Numer tomu
34
Link do pełnego tekstu
Identyfikator DOI
Liczba arkuszy
0,25
Autorzy
Pozostali autorzy
+ 2
Słowa kluczowe
EN
Al/MgO interaction α-AI2O3 MgAl2O4 MgO faceting
Streszczenia
Język
EN
Treść
The model Al/MgO couples were produced in wettability tests by a sessile drop method, which may help to understand the mechanism of high temperature interactions in other metal/oxide systems. The characterization of reaction products resulting from these interactions is of crucial importance in understanding of such processes. The aluminium (5N) drop was deposited on [l00], [110] and [111] MgO substrates at l000°C/1 h in vacuum ~5'10“* Pa. The microstructure was characterized with an light, as well as electron scanning and transmission microscopy methods. The thin foils for TEM observations were cut using FIB system. The investigations showed that for all MgO orientations, the reaction product region formed inside MgO substrates is composed of two regions, i.e. the layer of coarse products surrounded by a rim of finer products. Both the coarse area, filled with α-Al2O3, and fine area, filled with MgAl2O4, bear the same microstructure features, i.e. the dendrite-like shape ofreactively formed oxide crystallites surrounded by aluminium network. During the growth, the α-A120, crystallites tend to accumulate increasing number of defects, including precipitates and connected with them stacking faults, what may lead to a change of type of stacking of α-Al2O3 basal plane and to the formation of ot her alumina phases. The interaction between liquid aluminium and the MgO is accompanied with the substrate dissolution causing an orthogonal faceting of the Al/MgO interface along the [110] MgO directions.
Cechy publikacji
ORIGINAL_ARTICLE
Inne
System-identifier
662894