Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates
PBN-AR
Instytucja
Wydział Elektroniki, Telekomunikacji i Informatyki (Politechnika Gdańska)
Informacje podstawowe
Główny język publikacji
ENG
Czasopismo
APPLIED SURFACE SCIENCE
ISSN
0169-4332
EISSN
Wydawca
DOI
URL
Rok publikacji
2016
Numer zeszytu
Strony od-do
846-856
Numer tomu
387
Identyfikator DOI
Liczba arkuszy
Słowa kluczowe
CVD, BORON-DOPED DIAMOND, OPTICAL PROPERTIES, OPTICAL COATINGS, SPECTROSCOPIC ELLIPSOMETRY
Streszczenia
Język
Treść
This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 1010 cm−2. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp3/sp2 ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0-2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ=550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.
Inne
System-identifier
137073
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