Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy
PBN-AR
Instytucja
Instytut Wysokich Ciśnień Polskiej Akademii Nauk
Informacje podstawowe
Główny język publikacji
angielski
Czasopismo
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (20pkt w roku publikacji)
ISSN
0370-1972
EISSN
1521-3951
Wydawca
WILEY-BLACKWELL
DOI
URL
Rok publikacji
2017
Numer zeszytu
8
Strony od-do
1600710
Numer tomu
254
Identyfikator DOI
Liczba arkuszy
1
Słowa kluczowe
angielski
III-nitride semiconductors
band structure
MOVPE
superlattices
Streszczenia
Język
angielski
Treść
To obtain short period superlattices (SPLS) of InxGa1−xN/GaN in most cases molecular beam epitaxy has been applied. In this work the metal-organic vapor phase epitaxy was used for obtaining similar structures and their quality as well as light emission features are studied. Thanks to control of growth parameters it was possible to fabricate InxGa1−xN/GaN SPSLs with structural quality of structures grown by MBE. They contain around 30% of indium in quantum wells (QWs) and different number m of atomic monolayers in QWs, and n. in the barriers. X-ray diffraction and transmission electron microscope measurements have confirmed that the designed SPSLs structures were obtained. An agreement between the experimental results of photoluminescence measurements and theoretically predicted band gap behavior of SPSLs composed of mInxGa1−xN/nGaN was achieved. Built-in electric field in quantum wells and barriers of the selected structures were determined using a simplified method of calculation.
Inne
System-identifier
PX-5a8fde42d5de59a89e26e6c8
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