Electronic structure of Ce3+ in yttrium and lutetium orthoaluminate crystals and single crystal layers
PBN-AR
Instytucja
Wydział Elektroniki i Technik Informacyjnych (Politechnika Warszawska)
Informacje podstawowe
Główny język publikacji
en
Czasopismo
Journal of Alloys and Compounds (35pkt w roku publikacji)
ISSN
0925-8388
EISSN
Wydawca
DOI
URL
Rok publikacji
2017
Numer zeszytu
5 November
Strony od-do
157-163
Numer tomu
723
Identyfikator DOI
Liczba arkuszy
0.5
Autorzy
(liczba autorów: 13)
Pozostali autorzy
+ 12
Streszczenia
Język
en
Treść
Low temperature infrared absorption spectra of yttrium orthoaluminate and lutetium orthoaluminate bulk crystals and liquid phase epitaxy grown single crystalline films doped with Ce3+ are presented. In the region of intra-configurational 4f – 4f transitions the spectra indicate the existence of at least three different Ce3+ related centers. The dominant center is associated with Ce substituting yttrium or lutetium. The two additional centers are most probably related to so called antisite positions of rare-earth ions in orthoaluminates, i.e., ions on Al sites. The concentration of antisite defects is lower in epitaxially grown layers of yttrium orthoaluminate than in the bulk crystals, in spite of the higher doping concentration. In contrast, in lutetium orthoaluminate additional Ce3+ centers are also present in epitaxial layers at quite high concentration. Crystal field analysis based on the exchange charge model exhibits excellent agreement of the calculated transition energies with experimental data for the dominant Ce3+ center. The linewidths of the 4f-4f transitions in both types of crystals are different depending on the final level of transition. This is explained as a result of electron-phonon coupling, enhanced by the matching inter-level spacing of the 2F7/2 state with phonon energies of the examined materials.
Inne
System-identifier
WUT28f0d831047747bca653509bfa96f92f
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